mar. 2003 mitsubishi hvigbt modules CM400DY-66H high power switching use insulated type i c ................................................................... 400a v ces ....................................................... 3300v insulated type 2-elements in a pack application inverters, converters, dc choppers, induction heating, dc to dc converters. CM400DY-66H hvigbt modules (high voltage insulated gate bipolar transistor modules) outline drawing & circuit diagram dimensions in mm hvigbt (high voltage insulated gate bipolar transistor) modules c2 g2 c2 e2 e2 circuit diagram g1 e1 e1 c1 g1 114 57 0.25 57 0.25 130 e1 c2 e1 e2 c1 c2 e2(c1) cm 24.5 40 20 124 0.25 140 7.2 48.8 53.6 36.3 4 - m8 nuts 6 - 7 mounting holes 5 - m4 nuts g2 18 61.5 5 38 15 39.5 5.7 15 30 28 label
mar. 2003 mitsubishi hvigbt modules CM400DY-66H high power switching use insulated type hvigbt modules (high voltage insulated gate bipolar transistor modules) maximum ratings (tj = 25 c) 3300 20 400 800 400 800 3400 ?0 ~ +150 ?0 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 v v a a a a w c c v n? n? n? kg v ge = 0v v ce = 0v dc, t c = 60 c pulse (note 1) pulse (note 1) t c = 25 c, igbt part charged part to base plate, rms, sinusoidal, ac 60hz 1min. main terminals screw m8 mounting screw m6 auxiliary terminals screw m4 typical value collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage mounting torque mass collector current emitter current symbol item conditions unit ratings v ces v ges i c i cm i e (note 2) i em (note 2) p c (note 3) t j t stg v iso v v v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 1650v, i c = 400a, v ge = 15v v cc = 1650v, i c = 400a v ge1 = v ge2 = 15v r g = 7.5 ? resistive load switching operation i e = 400a, v ge = 0v i e = 400a die / dt = ?00a / s junction to case, igbt part (per 1/2 module) junction to case, fwdi part (per 1/2 module) case to fin, conductive grease applied (per 1/2 module) i c = 40ma, v ce = 10v i c = 400a, v ge = 15v (note 4) v ce = 10v v ge = 0v 5 0.5 5.72 1.00 2.00 2.00 1.00 4.29 1.20 0.036 0.072 ma a nf nf nf c s s s s v s c k/w k/w k/w 4.40 4.80 40 4.0 1.2 1.9 3.30 100 0.016 6.0 4.5 7.5 collector cutoff current gate-emitter threshold voltage gate-leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge contact thermal resistance min typ max i ces i ges c ies c oes c res q g t d (on) t r t d (off) t f v ec (note 2) t rr (note 2) q rr (note 2) r th(j-c)q r th(j-c)r r th(c-f) electrical characteristics (tj = 25 c) symbol item conditions limits unit note 1. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 2. i e , v ec , t rr , q rr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. thermal resistance v ge(th) v ce(sat) hvigbt (high voltage insulated gate bipolar transistor) modules
mar. 2003 hvigbt (high voltage insulated gate bipolar transistor) modules mitsubishi hvigbt modules CM400DY-66H high power switching use insulated type performance curves 10 0 23 10 1 5710 0 23 5710 1 23 5710 2 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 1 c ies c oes c res v ge = 0v, t j = 25 c c ies, c oes : f = 100khz c res : f = 1mhz 800 400 200 0 10 0 2468 600 t j =25 c v ge =13v v ge =12v v ge =11v v ge =10v v ge =9v v ge =8v v ge =7v v ge =14v v ge =15v v ge =20v 0 8 6 4 2 0 200 400 600 800 v ge =15v t j = 25 c t j = 125 c 800 400 200 0 600 20 0481216 v ce =10v t j = 25 c t j = 125 c 020 16 12 8 4 10 8 6 4 2 0 t j = 25 c i c = 400a i c = 800a i c = 160a capacitance characteristics ( typical ) capacitance c ies , c oes , c res ( nf ) collector-emitter voltage v ce ( v ) output characteristics ( typical ) collector current i c ( a ) transfer characteristics ( typical ) collector current i c ( a ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) collector-emitter saturation voltage characteristics ( typical ) collector-emitter voltage v ce ( v ) collector-emitter saturation voltage v ce(sat) ( v ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage characteristics ( typical ) free-wheel diode forward characteristics ( typical ) emitter-collector voltage v ec ( v ) emitter current i e ( a ) 0 600 800 400 200 8 6 4 2 0 t j = 25 c t j = 125 c
mar. 2003 hvigbt (high voltage insulated gate bipolar transistor) modules mitsubishi hvigbt modules CM400DY-66H high power switching use insulated type 4000 3000 0 1000 2000 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 3 2 10 0 5 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 5 t d(off) v cc = 1650v, v ge = 15v r g = 7.5 ? , t j = 125 c inductive load t d(on) t r t f v cc = 1650v, t j = 125 c inductive load v ge = 15v, r g = 7.5 ? t rr i rr 7 5 3 2 10 1 7 5 3 2 10 2 10 1 10 3 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 single pulse t c = 25 c r th(j c)q = 0.036k/ w r th(j c)r = 0.072k/ w (per 1/2 module) 20 16 12 8 4 0 v cc = 1650v i c = 400a half-bridge switching time characteristics ( typical ) switching times ( s ) collector current i c ( a ) reverse recovery characteristics of free-wheel diode ( typical ) reverse recovery time t rr ( s ) emitter current i e ( a ) reverse recovery current i rr ( a ) transient thermal impedance characteristics normalized transient thermal impedance z th(j c) time ( s ) gate charge characteristics ( typical ) gate-emitter voltage v ge ( v ) gate charge q g ( nc ) 5.0 4.0 3.0 2.0 1.0 0 0 20406080 gate resistance ( ? ) half-bridge switching energy characteristics ( typical ) switching energy ( j/p ) v cc = 1650v, i c = 400a, v ge = 15v, tj = 125 c, inductive load e on e off 0 1.0 1.5 0.5 2.0 0 200 400 800 600 half-bridge switching energy characteristics ( typical ) current ( a ) switching energy ( j/p ) e on e off e rec v cc = 1650v, v ge = 15v, r g = 7.5 ? , tj = 125 c, inductive load
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